Effective refractive index and first-order-mode cutoff conditions in InGaAsP/InP DH laser structures (λ = 1.2-1.6 µm)

Author

Botez, Dan

Author_Institution

RCA Labs., Princeton, NJ, USA

Volume

18

Issue

5

fYear

1982

fDate

5/1/1982 12:00:00 AM

Firstpage

865

Lastpage

870

Abstract

The virtual wavelength-invariance of the ratio between bandgap wavelength and the square root of the dielectric-constant step in InGaAsP/InP DH structures [i.e., ( $\\lambda _{g}/\\sqrt {\\Delta \\epsilon}) = 0.95 \\pm 0.03$ for 1.2 μm $< \\lambda _{g} < 1.6 \\mu$ m] and an analytical approximation for the transverse propagation constant $b$ , allow the derivation of an accurate, closed-form expression for the effective refractive index Neffof InGaAsP/InP planar DH lasers emitting in the $1.2-1.6 \\mu$ m range. Then, Neffis only a function of two readily measurable parameters: emission wavelength and active-layer thickness. Furthermore, the mode cutoff conditions for various lateral waveguides: buried-rectangular, buried-crescent, and ridge-guide, become wavelength-independent analytical expressions. First-order-mode cutoff conditions for these lateral waveguides are derived, plotted and compared to experimental data from mode-stabilized 1.3 and 1.55 μm DH lasers.

Keywords

Gallium materials/lasers; Optical refraction; Closed-form solution; DH-HEMTs; Dielectrics; Indium phosphide; Laser beam cutting; Laser modes; Photonic band gap; Propagation constant; Refractive index; Waveguide lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1982.1071622

Filename

1071622