DocumentCode
1093819
Title
Numerical simulation of local charging during plasma etching of a dielectric material
Author
Shibkov, A. ; Abatchev, M.K. ; Kang, H.K. ; Lee, M.Y.
Author_Institution
Semicond. Res. & Dev. Centre, Samsung Electron. Co. Ltd., Kyungki-Do, South Korea
Volume
32
Issue
10
fYear
1996
fDate
5/9/1996 12:00:00 AM
Firstpage
890
Lastpage
891
Abstract
Local pattern charging during plasma etching of a dielectric material is investigated by means of two-dimensional Monte-Carlo simulation. Detailed surface charge and potential distributions are presented and analysed. The differential pattern charging is shown to induce an electric field which is strong enough to cause considerable ion energy reduction and etched profile distortion
Keywords
Monte Carlo methods; ULSI; digital simulation; integrated circuit technology; sputter etching; surface charging; IC fabrication; ULSI; dielectric material; differential pattern charging; etched profile distortion; ion energy reduction; local pattern charging; plasma etching; potential distribution; surface charge distribution; two-dimensional Monte-Carlo simulation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960585
Filename
509943
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