Title :
Numerical simulation of local charging during plasma etching of a dielectric material
Author :
Shibkov, A. ; Abatchev, M.K. ; Kang, H.K. ; Lee, M.Y.
Author_Institution :
Semicond. Res. & Dev. Centre, Samsung Electron. Co. Ltd., Kyungki-Do, South Korea
fDate :
5/9/1996 12:00:00 AM
Abstract :
Local pattern charging during plasma etching of a dielectric material is investigated by means of two-dimensional Monte-Carlo simulation. Detailed surface charge and potential distributions are presented and analysed. The differential pattern charging is shown to induce an electric field which is strong enough to cause considerable ion energy reduction and etched profile distortion
Keywords :
Monte Carlo methods; ULSI; digital simulation; integrated circuit technology; sputter etching; surface charging; IC fabrication; ULSI; dielectric material; differential pattern charging; etched profile distortion; ion energy reduction; local pattern charging; plasma etching; potential distribution; surface charge distribution; two-dimensional Monte-Carlo simulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960585
