DocumentCode :
1093854
Title :
Low-frequency noise in permeable base transistors
Author :
Zhu, Xichen C. ; Zhang, X.N. ; Van Der Ziel, Aldert Van ; Bozler, Carl O.
Author_Institution :
Kunming Institute of Physics, China
Volume :
31
Issue :
10
fYear :
1984
fDate :
10/1/1984 12:00:00 AM
Firstpage :
1408
Lastpage :
1413
Abstract :
The predominant noise is 
noise and consists of two parts: a) Noise varying as 
, generated mostly with conducting channel and predominating for normal values of the collector voltage VCE . b) Noise at low VCE and practically independent of VCE ; it is generated chiefly in the space charge region around the base grating and gives collector noise at 
. The turnover frequency of the first noise source lies at about 20 MHz for 
V, 
V. At sufficiently high frequencies the PBT shows thermal noise of the output conductance 
at zero bias. Generation-recombination noise is observed at large VBE and low VCE and comes mostly from the space charge region around the base grating.
noise and consists of two parts: a) Noise varying as , generated mostly with conducting channel and predominating for normal values of the collector voltage V noise at . The turnover frequency of the first noise source lies at about 20 MHz for V, V. At sufficiently high frequencies the PBT shows thermal noise of the output conductance at zero bias. Generation-recombination noise is observed at large VKeywords :
1f noise; Cutoff frequency; Fluctuations; Frequency dependence; Frequency estimation; Hafnium; Integrated circuit noise; Low-frequency noise; Noise level; Thermal resistance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21725
Filename :
1484010
Link To Document :
