DocumentCode
1093898
Title
Oxide-confined vertical-cavity laser with additional etched void confinement
Author
Deng, H. ; Deppe, D.G.
Author_Institution
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Volume
32
Issue
10
fYear
1996
fDate
5/9/1996 12:00:00 AM
Firstpage
900
Lastpage
901
Abstract
A vertical-cavity surface-emitting laser that incorporates oxide confinement with additional etched void photon confinement is described. A room-temperature continuous-wave threshold of 75 μA for a 3.5 μm-diameter lateral device size is achieved
Keywords
etching; optical fabrication; semiconductor lasers; surface emitting lasers; 3.5 micron; 75 muA; etched void photon confinement; oxide confinement; room-temperature continuous-wave threshold current; vertical-cavity surface-emitting laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960579
Filename
509950
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