Title :
High-Frequency Performance of Schottky Source/Drain Silicon pMOS Devices
Author :
Raskin, J. -P ; Pearman, D.J. ; Pailloncy, G. ; Larson, J.M. ; Snyder, J. ; Leadley, D.L. ; Whall, T.E.
Author_Institution :
Univ. of Warwick, Coventry
fDate :
4/1/2008 12:00:00 AM
Abstract :
A radio-frequency performance of 85-nm gate-length p-type Schottky barrier (SB) with PtSi source/drain materials is investigated. The impact of silicidation annealing temperature on the high-frequency behavior of SB MOSFETs is analyzed using an extrinsic small-signal equivalent circuit. It is demonstrated that the current drive and the gate transconductance strongly depend on the silicidation anneal temperature, whereas the unity-gain cutoff frequency of the measured devices remains nearly unchanged.
Keywords :
MOS integrated circuits; MOSFET; Schottky barriers; annealing; equivalent circuits; MOSFET; Schottky barrier; Schottky source/drain silicon pMOS devices; equivalent circuit; silicidation annealing temperature; size 85 nm; Electrostatic measurement; SB metal/source MOSFETs; Schottky barriers (SBs); microwave measurements; scattering parameter measurement; semiconductor devices;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.918250
