Title :
New mounting technique for two-terminal millimetre-wave devices
Author_Institution :
Tech. Univ. Munchen
fDate :
5/26/1994 12:00:00 AM
Abstract :
A new mounting technique for two-terminal devices is presented which minimises parasitic elements and improves thermal heat resistance. Monolithic fabrication of the structure leads to high reproducibility. First experimental results for power generation at W-band frequencies with GaAs Impatt diodes are reported
Keywords :
III-V semiconductors; IMPATT diodes; gallium arsenide; semiconductor technology; thermal resistance; GaAs; GaAs Impatt diodes; W-band frequencies; monolithic fabrication; mounting technique; parasitic elements; power generation; reproducibility; thermal heat resistance; two-terminal millimetre-wave devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940575
