DocumentCode
1093943
Title
Mode characteristics of nonplanar double-heterojunction and large-optical-cavity laser structures
Author
Butler, Jerome K. ; Botez, Dan
Author_Institution
RCA Laboratories, Princeton, NJ, USA
Volume
18
Issue
6
fYear
1982
fDate
6/1/1982 12:00:00 AM
Firstpage
952
Lastpage
961
Abstract
Mode behavior of nonplanar double-heterojunction (DH) and large-optical-cavity (LOC) lasers is investigated using the effective index method to model the lateral field distribution. The thickness variations of various layers for the devices discussed are correlated with the growth characteristics of liquid-phase epitaxy over, topographical features (channels, mesas) etched into the substrate. The effective dielectric profiles of constricted double-heterojunction (CDH)-LOC lasers show a strong influence on transverse mode operation: the fundamental transverse mode (i.e., in the plane perpendicular to the junction) may be laterally index-guided, while the first (high)-order mode is laterally index-antiguided. The analytical model developed uses a smoothly varying hyperbolic cosine distribution to characterize lateral index variations. The waveguide model is applied to several lasers to illustrate conditions necessary to convert leaky modes to trapped ones via the active-region gain distribution. Theoretical radiation patterns are calculated using model parameters, and matched to an experimental far-field pattern.
Keywords
Gallium materials/lasers; Laser modes; Laser resonators; Analytical models; DH-HEMTs; Dielectric substrates; Epitaxial growth; Etching; Lab-on-a-chip; Laser modes; Laser theory; Semiconductor process modeling; Waveguide lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1982.1071635
Filename
1071635
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