• DocumentCode
    1093943
  • Title

    Mode characteristics of nonplanar double-heterojunction and large-optical-cavity laser structures

  • Author

    Butler, Jerome K. ; Botez, Dan

  • Author_Institution
    RCA Laboratories, Princeton, NJ, USA
  • Volume
    18
  • Issue
    6
  • fYear
    1982
  • fDate
    6/1/1982 12:00:00 AM
  • Firstpage
    952
  • Lastpage
    961
  • Abstract
    Mode behavior of nonplanar double-heterojunction (DH) and large-optical-cavity (LOC) lasers is investigated using the effective index method to model the lateral field distribution. The thickness variations of various layers for the devices discussed are correlated with the growth characteristics of liquid-phase epitaxy over, topographical features (channels, mesas) etched into the substrate. The effective dielectric profiles of constricted double-heterojunction (CDH)-LOC lasers show a strong influence on transverse mode operation: the fundamental transverse mode (i.e., in the plane perpendicular to the junction) may be laterally index-guided, while the first (high)-order mode is laterally index-antiguided. The analytical model developed uses a smoothly varying hyperbolic cosine distribution to characterize lateral index variations. The waveguide model is applied to several lasers to illustrate conditions necessary to convert leaky modes to trapped ones via the active-region gain distribution. Theoretical radiation patterns are calculated using model parameters, and matched to an experimental far-field pattern.
  • Keywords
    Gallium materials/lasers; Laser modes; Laser resonators; Analytical models; DH-HEMTs; Dielectric substrates; Epitaxial growth; Etching; Lab-on-a-chip; Laser modes; Laser theory; Semiconductor process modeling; Waveguide lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1982.1071635
  • Filename
    1071635