DocumentCode :
1093947
Title :
Thermal comparison of long-wavelength vertical-cavity surface-emitting laser diodes
Author :
Piprek, Joachim ; Yoo, S.J.B.
Author_Institution :
Mater. Sci. Programme, Delaware Univ., Newark, DE
Volume :
30
Issue :
11
fYear :
1994
fDate :
5/26/1994 12:00:00 AM
Firstpage :
866
Lastpage :
868
Abstract :
Heat flow finite element analysis is applied to basic device concepts, including planar structures with InGaAsP/InP or AlAs/GaAs substrate side mirrors (mounted top-up or top-down) and etched-well lasers with Si/SiO2 dielectric mirrors. In several cases, the calculated thermal resistance values are higher than with short-wavelength devices, but wafer-fused structures on GaAs substrate show clear thermal advantages
Keywords :
finite element analysis; laser accessories; laser cavity resonators; mirrors; semiconductor lasers; thermal resistance; AlAs-GaAs; AlAs/GaAs substrate side mirrors; InGaAsP-InP; InGaAsP/InP substrate side mirrors; Si-SiO2; Si/SiO2 dielectric mirrors; etched-well lasers; heat flow finite element analysis; long-wavelength vertical-cavity surface-emitting laser diodes; planar structures; thermal resistance; wafer-fused structures;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940589
Filename :
287469
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1093947
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