Title :
Quantum cascade laser: an intersub-band semiconductor laser operating above liquid nitrogen temperature
Author :
Faist, J. ; Capasso, Federico ; Sivco, D.L. ; Sirtori, C. ; Hutchinson, A.L. ; Cho, Andrew Y.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ
fDate :
5/26/1994 12:00:00 AM
Abstract :
A unipolar intersub-band semiconductor laser operating above liquid nitrogen temperature at 4.3 μm wavelength is reported. The measured optical power in pulsed operation is 30 mW at 102 K and the slope efficiency 0.1 W/A. Strong line-narrowing above threshold and well resolved longitudinal modes are observed up to 125 K. This new light source, called the quantum cascade laser, is based on sequential photon emission in a staircase/coupled quantum well AlInAs/GaInAs structure grown by MBE and its wavelength can be tailored in an extremely wide region
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; semiconductor lasers; 102 to 125 K; 30 mW; 4.3 micron; AlInAs-GaInAs; MBE; light source; line-narrowing; longitudinal modes; optical power; pulsed operation; quantum cascade laser; sequential photon emission; slope efficiency; staircase/coupled quantum well; unipolar intersub-band semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940605
