DocumentCode
1094021
Title
Noise associated with distributed resistance of MOSFET gate structures in integrated circuits
Author
Jindal, R.P.
Author_Institution
AT&T Bell Laboratories, Murray Hill, NJ
Volume
31
Issue
10
fYear
1984
fDate
10/1/1984 12:00:00 AM
Firstpage
1505
Lastpage
1509
Abstract
The effect of thermal voltage fluctuations in a resistive gate matrix perpendicular to the direction of channel current, in a MOSFET, are treated in detail. A general formula is derived to arrive at channel current fluctuations for an arbitrary gate matrix layout. This formulation is an extension of the analysis done by Thornber and is valid for frequencies at which the distributed RC time constants associated with the gate matrix are not important. The results of this analysis can be used to design low-noise resistive gate structures.
Keywords
Bipolar transistors; Integrated circuit noise; Laboratories; MOSFET circuits; P-n junctions; Silicon; Temperature dependence; Temperature distribution; Thermal resistance; Voltage fluctuations;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21741
Filename
1484026
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