Title :
Over 20 Gbit/s throughput ATM crosspoint switch large scale integrated circuit using Si bipolar technology
Author :
Kawamura, Toshihiko ; Ichino, H. ; Suzuki, M. ; Genda, Kouichi ; Doi, Yoshihito
Author_Institution :
NTT LSI Labs., Kanagawa
fDate :
5/26/1994 12:00:00 AM
Abstract :
An ATM crosspoint switch large scale integrated circuit (LSI) for a high-speed high-capacity input and output buffering ATM switching system was developed through the use of Si bipolar technology. It was confirmed that the LSI could attain 28.8 Gbit/s throughput in 32-parallel-signal operation at 900 Mbit/s. This throughput is -40% higher than the highest level ever previously reported
Keywords :
asynchronous transfer mode; bipolar integrated circuits; electronic switching systems; large scale integration; 20 Gbit/s; 20 Gbit/s throughput ATM crosspoint switch; 28.5 Gbit/s; 32-parallel-signal operation; 900 Mbit/s; Si; Si bipolar technology; high-speed high-capacity input; large scale integrated circuit; output buffering ATM switching syste;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940582
