• DocumentCode
    1094064
  • Title

    Study of the XeCl laser pumped by a high-intensity electron beam

  • Author

    Tisone, Gary C. ; Hoffman, James M.

  • Author_Institution
    Sandia National Labs., Albuquerque, NM, USA
  • Volume
    18
  • Issue
    6
  • fYear
    1982
  • fDate
    6/1/1982 12:00:00 AM
  • Firstpage
    1008
  • Lastpage
    1020
  • Abstract
    We present the results of a detailed experimental study of the XeCl laser pumped by a high-intensity electron beam. The laser system was optimized as an oscillator for mixtures of Xe and HCl with Ne, Ar, and Kr diluents. The peak intrinsic efficiency (laser energy out/electron-beam energy deposited) was near 4.5 percent for each of these diluents. Small-signal gain and background absorption were measured as a function of electron-beam deposition rate from 0.4 to 6 MW/ cm3. The ratio of small-signal gain to absorption was found to be constant over this range with a value of ∼5. Measurements of absorption in the presence of a large photon flux indicated that there was no appreciable saturable contribution to the absorption. Measurements of fluorescence from the B and C states indicate that collisional mixing between these states is very rapid. The formation efficiencies of the B and C states are estimated to be 0.15 and 0.05, respectively. A vibrational relaxation rate of between 1 and 1.5 \\times 10^{-10} cm3. s-1was determined. The effect of this finite relaxation rate is to reduce the energy available to the stimulated process by a factor of 0.67-0.75. Estimates of the XeCl* deactivation rates by HCl and electrons were also obtained. A value of 1.7 \\times 10^{-9} cm3. s-1was obtained for quenching by HCl, and a value of \\sim 1 \\times 10^{-7} cm3. s-1was estimated for electron deactivation.
  • Keywords
    Laser fusion; Noble-gas lasers; Ultraviolet lasers; Absorption; Argon; Electron beams; Laser applications; Laser excitation; Laser fusion; Optical surface waves; Pulsed laser deposition; Pump lasers; Surface emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1982.1071646
  • Filename
    1071646