DocumentCode
1094085
Title
Interband Auger recombination in InGaAsP
Author
Chiu, L.C. ; Chen, P.C. ; Yariv, Amnon
Author_Institution
California Institute of Technology, Pasadena, CA 91125
Volume
18
Issue
6
fYear
1982
fDate
6/1/1982 12:00:00 AM
Firstpage
938
Lastpage
941
Abstract
The interband Auger recombination lifetimes of two Auger processes have been calculated to correlate measured threshold current densities and carrier lifetimes for InGaAsP and InGaAsSb lasers. Good aggreement with experimental data was obtained for lasers with low nominal threshold current densities. These results demonstrate the importance of Auger recombination in the threshold characteristics of InGaAsP/InP lasers.
Keywords
Gallium materials/lasers; Charge carrier lifetime; Current measurement; Density measurement; Gallium arsenide; Photonic band gap; Radiative recombination; Semiconductor lasers; Spontaneous emission; Temperature distribution; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1982.1071648
Filename
1071648
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