Title :
Evolution of the MOSFET dynamic RAM—A personal view
Author :
Dennard, Robert H.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
fDate :
11/1/1984 12:00:00 AM
Abstract :
The early conceptual stages and key elements in the development of the one-device MOSFET dynamic RAM are reviewed from the personal perspective of the author. Future miniaturization to the level of ¼ µm channel length and minimum lithography dimension is projected.
Keywords :
DRAM chips; Digital integrated circuits; Helium; Integrated circuit technology; Lithography; MOSFET circuits; Magnetic films; Magnetic memory; Random access memory; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21751
