DocumentCode
1094101
Title
Evolution of the MOSFET dynamic RAM—A personal view
Author
Dennard, Robert H.
Author_Institution
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
Volume
31
Issue
11
fYear
1984
fDate
11/1/1984 12:00:00 AM
Firstpage
1549
Lastpage
1555
Abstract
The early conceptual stages and key elements in the development of the one-device MOSFET dynamic RAM are reviewed from the personal perspective of the author. Future miniaturization to the level of ¼ µm channel length and minimum lithography dimension is projected.
Keywords
DRAM chips; Digital integrated circuits; Helium; Integrated circuit technology; Lithography; MOSFET circuits; Magnetic films; Magnetic memory; Random access memory; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21751
Filename
1484036
Link To Document