DocumentCode :
1094113
Title :
Ultra-large scale integration
Author :
Meindl, James D.
Author_Institution :
Stanford University, Stanford, CA
Volume :
31
Issue :
11
fYear :
1984
fDate :
11/1/1984 12:00:00 AM
Firstpage :
1555
Lastpage :
1561
Abstract :
Ultra-large scale integration is governed by a hierarchical matrix of limits. The levels of this hierarchy can be codified as 1) fundamental, 2) material, 3) device, 4) circuit, and 5) system. Each level includes both theoretical and practical as well as analogical limits. Theoretically, thermal fluctuations impose a fundamental limit of several kT on switching energy. Scattering limited velocity and critical electric field establish a material limit on switching speed. Avoidance of punchthrough sets a device dimension limit. CMOS power-delay product defines a circuit limit. And, clock skew represents a system limit on ULSI. For conservative design margins, circuit limits project MOSFET channel lengths in the 0.4-0.2 µm range.
Keywords :
Area measurement; CMOS technology; Clocks; Fluctuations; Integrated circuit interconnections; Scattering; Silicon; Steel; Temperature; Ultra large scale integration;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21752
Filename :
1484037
Link To Document :
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