• DocumentCode
    1094116
  • Title

    Effects of tungsten silicidation on Fowler-Nordheim tunnelling current and charge trapping in polysilicon-oxide-silicon capacitors

  • Author

    Ling, C.H. ; Ang, D.S.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Univ. of Singapore
  • Volume
    32
  • Issue
    10
  • fYear
    1996
  • fDate
    5/9/1996 12:00:00 AM
  • Firstpage
    933
  • Lastpage
    934
  • Abstract
    Results of Fowler-Nordheim current stress are compared for tungsten polycided and non-polycided gate MOS capacitors. An initial high pre-tunnelling current, decreasing with subsequent gate bias scan, is reported for non-polycided device tunnelling from the gate. This is attributed to the charging of oxide electron traps. A temperature anneal at 200°C demonstrates that these traps are rechargeable
  • Keywords
    MOS capacitors; annealing; electron traps; semiconductor device metallisation; tungsten compounds; tunnelling; 200 C; Fowler-Nordheim tunnelling current; MOS capacitor; Si-SiO2-Si; charge trapping; electron traps; polycide gate; polysilicon-oxide-silicon capacitor; temperature anneal; tungsten silicidation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960597
  • Filename
    509972
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1094116