Symmetric bipolar charge-plasma transistor with extruded base for enhanced performance

A new structure for a symmetric bipolar charge-plasma transistor device with an extruded base is proposed. The charge plasma and extruded base concepts are used to increase the current gain and cutoff frequency of the proposed device, respectively. Metal contact hafnium accumulates electrons in the emitter/collector (E/C) regions and platinum accumulates holes in the base region. Using the metal contact of different work functions, the electrons and holes are accumulated in a lightly doped silicon film to create the E/C and the base regions, respectively. Two-dimensional simulations of the proposed device demonstrate that it has a higher current gain of 9 × 10⁶ and a peak cutoff frequency (f_T) of 87.3 GHz. Furthermore, the f_T for different silicon film thicknesses and base widths is optimised.