Title :
Silicon-on-insulator for high-temperature applications
Author :
Vanhoenacker-Janvier, D. ; Kaamouchi, M. El ; Moussa, M. Si
Author_Institution :
Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve
fDate :
2/1/2008 12:00:00 AM
Abstract :
The silicon-on-insulator (SOI) CMOS technology is one of the best candidates for high- temperature applications due to its low leakage current, steep subthreshold slope, absence of latch-up phenomenon and temperature-resistant threshold voltage. However, the most critical elements for high temperature applications are transmission lines, especially thin-film microstrip lines. In the paper, the impact of high-temperature operation on the RF performance of some SOI circuits is analysed up to 250degC.
Keywords :
CMOS integrated circuits; silicon-on-insulator; SOI CMOS technology; high-temperature application; silicon-on-insulator; thin-film microstrip line;
Journal_Title :
Circuits, Devices & Systems, IET
DOI :
10.1049/iet-cds:20070117