Title :
Low-powered high-gain transresistance BiCMOS pulse amplifier
Author_Institution :
Interuniversitary Inst. for High Energy, Free Univ., Brussels
fDate :
5/9/1996 12:00:00 AM
Abstract :
A low-powered, high-gain amplifier for detector read out is discussed. The amplifier is fully balanced, differential and symmetrical in circuit topology and layout, making it radiation tolerant and relatively insensitive to varying magnetic fields in the large detector. The circuit has a differential gain of 110 mV/4fC, an average 10/90% rise time of 19 ns, a noise figure of √(5002+1002 )×Ct1.08 electrons and a power consumption of 750 μW. The circuit was implemented in the radiation hard SOI BiCMOS technology of DMILL
Keywords :
BiCMOS analogue integrated circuits; instrumentation amplifiers; integrated circuit noise; nuclear electronics; pulse amplifiers; radiation hardening (electronics); silicon-on-insulator; 19 ns; 750 muW; BiCMOS pulse amplifier; Si; detector read out; differential circuit topology; fully balanced configuration; high-gain transresistance amplifier; low-powered pulse amplifier; power consumption; radiation hard SOI BiCMOS technology; radiation tolerant IC; symmetrical topology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960607
