DocumentCode :
1094153
Title :
SPICE model of the resonant-tunnelling diode
Author :
Brown, E.R. ; Mahoney, L.J. ; Molvar, K.M.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA
Volume :
32
Issue :
10
fYear :
1996
fDate :
5/9/1996 12:00:00 AM
Firstpage :
938
Lastpage :
940
Abstract :
A SPICE3 model is developed for the resonant-tunnelling diode that combines a physical formulation of the coherent current component between zero bias and the valley point with an empirical formulation for the incoherent, or excess, current at bias voltages beyond the valley. The model is designed for type-I RTDs, such as GaAs-AlGaAs structures, and a fitting procedure is developed to derive the parameters of the model from the experimental current/voltage curve
Keywords :
SPICE; resonant tunnelling diodes; semiconductor device models; GaAs-AlGaAs; SPICE3 model; bias voltages; coherent current component; current/voltage curve; excess current; fitting procedure; resonant-tunnelling diode; type-I RTDs;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19960576
Filename :
509975
Link To Document :
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