DocumentCode :
1094167
Title :
Device characteristics of (Al,Ga)As lasers with Ga(As,Sb) active layers
Author :
Anthony, Philip J. ; Zilko, John L. ; Pawlik, Jonathan R. ; Swaminathan, V. ; Hartman, Robert L.
Author_Institution :
Bell Laboratories, Murray Hill, NJ, USA
Volume :
18
Issue :
7
fYear :
1982
fDate :
7/1/1982 12:00:00 AM
Firstpage :
1094
Lastpage :
1100
Abstract :
Device characteristics of double heterostructure lasers with Al0.4 Ga0.6 As confinement layers and GaAs0.99 Sb0.01 active layers are presented. Average emission wavelengths have been increased from 0.87 μm for undoped active layers to 0.88 μm for 
cm-3Ge doped active layers with a "wash" melt preceding the growth of the active layer and to 0.89 μ for 
cm-3Mg doped active layers grown following a "wash" melt. Threshold currents for lasers from 21 wafers are examined for several growth conditions and compared with Al0.08 Ga0.92 As active layer devices. Device resistance, external quantum efficiency, device degradation, and pulsed and CW threshold currents as a function of temperature are also discussed.
cm-3Ge doped active layers with a "wash" melt preceding the growth of the active layer and to 0.89 μ for cm-3Mg doped active layers grown following a "wash" melt. Threshold currents for lasers from 21 wafers are examined for several growth conditions and compared with AlKeywords :
Bibliographies; Gallium materials/lasers; Degradation; Fiber lasers; Gallium arsenide; Gas lasers; Lattices; Optical design; Optical fiber losses; Optical pulses; Temperature; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1982.1071655
Filename :
1071655
Link To Document :
