DocumentCode
1094246
Title
Heterostructure lasers
Author
Hayashi, Izuo
Author_Institution
Optoelectronics Joint Research Laboratory, Kawasaki, Japan
Volume
31
Issue
11
fYear
1984
fDate
11/1/1984 12:00:00 AM
Firstpage
1630
Lastpage
1642
Abstract
The demonstration of CW room temperature operation of the heterostructure laser was the beginning of a new era in semiconductor devices. This era introduced the use of heterojunctions to create electrical as well as optical boundaries. New developments in epitaxial techniques provided the base for heterojunction devices. This work describes the interdisciplinary research effort that lead to the breakthrough which enabled the room temperature operation of semiconductor lasers.
Keywords
Artificial intelligence; Current density; Gallium arsenide; Gas lasers; Optical fiber communication; P-n junctions; Photonic crystals; Semiconductor lasers; Stimulated emission; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21764
Filename
1484049
Link To Document