• DocumentCode
    1094246
  • Title

    Heterostructure lasers

  • Author

    Hayashi, Izuo

  • Author_Institution
    Optoelectronics Joint Research Laboratory, Kawasaki, Japan
  • Volume
    31
  • Issue
    11
  • fYear
    1984
  • fDate
    11/1/1984 12:00:00 AM
  • Firstpage
    1630
  • Lastpage
    1642
  • Abstract
    The demonstration of CW room temperature operation of the heterostructure laser was the beginning of a new era in semiconductor devices. This era introduced the use of heterojunctions to create electrical as well as optical boundaries. New developments in epitaxial techniques provided the base for heterojunction devices. This work describes the interdisciplinary research effort that lead to the breakthrough which enabled the room temperature operation of semiconductor lasers.
  • Keywords
    Artificial intelligence; Current density; Gallium arsenide; Gas lasers; Optical fiber communication; P-n junctions; Photonic crystals; Semiconductor lasers; Stimulated emission; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21764
  • Filename
    1484049