Title :
III-V compound semiconductor devices: Optical detectors
Author :
Stillman, Gregory E. ; Robbins, Virginia M. ; Tabatabaie, Nader
Author_Institution :
University of Illinois at Urbana-Champaign, Urbana, IL
fDate :
11/1/1984 12:00:00 AM
Abstract :
This article presents a review of the historical developments in optical detectors and discusses the motivations for interest in III-V semiconductors for optical-detector applications. Early device work in both depletion-mode photodiodes and avalanche photodiodes in III-V semiconductors is covered as well as the improvements that have been made in avalanche photodiode structures through work in silicon. Also, the results of ionization coefficient measurements on III-V compounds are summarized. Finally, several examples of recent avalanche photodiodes that utlilize the unique properties of heterostructures are presented.
Keywords :
Frequency; III-V semiconductor materials; Infrared detectors; Optical detectors; Photodiodes; Semiconductor devices; Semiconductor diodes; Semiconductor lasers; Semiconductor materials; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21765
