Transport study in Si-silicide-Si transistors using a Monte Carlo technique

The Monte Carlo technique has been used for the study of electron motion in a proposed Si-silicide-Si transistor (SST). The transmission coefficient and the transit time are calculated as functions of lattice temperature, initial energy of electrons coming from the emitter, and the applied base-collector bias. The results show that a maximum transmission coefficient for electrons occurs when the initial energy exceeds the maximum energy barrier of the base-collector junction by about 0.1 eV, and the transit time decreases as the applied base-collector junction bias increases and as the temperature decreases. Space charge effects caused by operating at high current densities are shown to reduce slightly the transmission coefficient.