Title :
A new field isolation technology employing lift-off patterning of sputtered SiO2films
Author :
Yachi, Toshiaki ; Serikawa, Tadash ; Wada, Tsutomu
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
fDate :
12/1/1984 12:00:00 AM
Abstract :
A new field isolation technology for LSI devices is described. This technology features low-temperature (<150° C) sputtered SiO2and photoresist lift-off. MOS devices are fabricated using this isolation technology. It is shown that bird´s-beak-free field oxide is formed using a fabrication process which is shorter than that using other isolation methods. It is shown that the narrow-channel effect is significantly reduced in MOSFET´s fabricated with this technology.
Keywords :
Boron; Fabrication; Isolation technology; Large scale integration; Physics; Resists; Semiconductor films; Silicon; Sputter etching; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21782
