High Power 20-GHz Photodiodes With Resonant Microwave Circuits

Author

Kejia Li ; Xiaojun Xie ; Qiugui Zhou ; Beling, Andreas ; Campbell, Joe C.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA

Volume

26

Issue

13

fYear

2014

fDate

1-Jul-14

Firstpage

1303

Lastpage

1306

Abstract

We report the design, fabrication, and characterization of resonant microwave circuits integrated with InGaAs/InP modified unitravelling-carrier photodiodes. The photodiodes were flip-chip bonded on AlN substrates with coplanar waveguide circuits. The RF output power levels of 23 and 21.6 dBm at 20 GHz are demonstrated for microwave open stubs and shorted stubs, respectively.

Keywords

III-V semiconductors; aluminium compounds; coplanar waveguides; gallium arsenide; indium compounds; integrated optics; microwave photonics; optical design techniques; optical fabrication; optical waveguides; photodiodes; AlN; InGaAs-InP; InGaAs-InP modified unitravelling-carrier photodiodes; aluminium nitride substrates; coplanar waveguide circuits; frequency 20 GHz; high-power photodiodes; integrated optics; resonant microwave circuit characterization; resonant microwave circuit design; resonant microwave circuit fabrication; resonant microwave circuits; Integrated circuit modeling; Photoconductivity; Photodiodes; Photonics; Power generation; RLC circuits; Radio frequency; Microwave photonics; optical fiber communication; photodiodes; tunable circuits and devices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2014.2322496

Filename

6811225