Title :
Design considerations for FET-gated power transistors
Author :
Chen, Dan Y. ; Chin, Shaoan
Author_Institution :
State University, Blacksburg, VA
fDate :
12/1/1984 12:00:00 AM
Abstract :
This paper deals with a recently proposed FET-bipolar combinational power transistor configuration. The feasibility of this configuration has been demonstrated using discrete devices. Design considerations are given to hybridize this configuration.
Keywords :
Breakdown voltage; Current supplies; Diodes; FETs; MOSFETs; Packaging; Power transistors; Surges; Switches; Turning;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21797
