• DocumentCode
    1094611
  • Title

    Design considerations for FET-gated power transistors

  • Author

    Chen, Dan Y. ; Chin, Shaoan

  • Author_Institution
    State University, Blacksburg, VA
  • Volume
    31
  • Issue
    12
  • fYear
    1984
  • fDate
    12/1/1984 12:00:00 AM
  • Firstpage
    1834
  • Lastpage
    1837
  • Abstract
    This paper deals with a recently proposed FET-bipolar combinational power transistor configuration. The feasibility of this configuration has been demonstrated using discrete devices. Design considerations are given to hybridize this configuration.
  • Keywords
    Breakdown voltage; Current supplies; Diodes; FETs; MOSFETs; Packaging; Power transistors; Surges; Switches; Turning;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21797
  • Filename
    1484082
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1094611