Title :
Hot-electron aging in p-channel MOSFET´s for VLSI CMOS
Author_Institution :
Burroughs Corporation, MCG, San Diego, CA
fDate :
12/1/1984 12:00:00 AM
Abstract :
Hot-electron effects were investigated via direct measurements of gate currents in both n-channel and p-channel devices for 1-µm CMOS structures. Results reveal substantial gate currents in p-channel transistors biased into saturation, implying that the P-MOS device may also pose a significant reliability hazard in a modern CMOS structure.
Keywords :
Aging; Coaxial components; Current measurement; Hot carriers; Impact ionization; Instruments; Micromanipulators; Performance evaluation; Probes; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21807
