Title :
The performance of source-coupled FET logic circuits that use GaAs MESFETs
Author :
Vu, Tho T. ; Peczalski, Andrzej ; Lee, Kang W. ; Conger, Jeff
Author_Institution :
Honeywell Syst. & Res. Center, Minneapolis, MN, USA
Abstract :
Gallium arsenide (GaAs) source-coupled FET logic (SCFL) circuits have demonstrated a wide range of tolerance to threshold voltage and a partial immunity to temperature variation. A complete SCFL implementation including the voltage reference circuit for both high-speed and low-power applications is described.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated logic circuits; GaAs; SCFL; low-power applications; partial immunity; source-coupled FET logic circuits; threshold voltage; voltage reference circuit; Circuit noise; Delay; FETs; Gallium arsenide; Integrated circuit noise; Logic circuits; MESFETs; Power dissipation; Power supplies; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
