DocumentCode
1094780
Title
Long-term retention of SNOS nonvolatile memory devices
Author
Topich, James A.
Author_Institution
NCR Microelectronics Division, Miamisburg, OH
Volume
31
Issue
12
fYear
1984
fDate
12/1/1984 12:00:00 AM
Firstpage
1908
Lastpage
1910
Abstract
Long-term retention tests on thin oxide SNOS (silicon gate nitride oxide silicon) nonvolatile memory devices have shown that the charge storage characteristics of these devices do not follow a simple logarithmic decay as many theories predict. The measured threshold voltage decay shows a break in the slope of retention data for both the WRITTEN and ERASED states with smaller rates of charge loss per decade of time for longer times.
Keywords
Capacitance; Charge coupled devices; Clocks; Electrodes; Image segmentation; Nonvolatile memory; Registers; Silicon; Threshold voltage; Timing;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21811
Filename
1484096
Link To Document