DocumentCode :
109481
Title :
Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET
Author :
Hu, Vita Pi-Ho ; Ming-Long Fan ; Pin Su ; Ching-Te Chuang
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
60
Issue :
10
fYear :
2013
fDate :
Oct. 2013
Firstpage :
3596
Lastpage :
3600
Abstract :
We present a comparative leakage analysis of germanium-on-insulator (GeOI) FinFET and germanium on bulk substrate FinFET (Ge bulk FinFET) at device and circuit levels. Band-to-band tunneling (BTBT) leakage-induced bipolar effect is found to result in an amplified BTBT leakage for GeOI FinFET. Device and circuit designs to mitigate the amplified BTBT leakage of GeOI FinFETs are suggested. The effectiveness of various high threshold voltage technology options including increasing channel doping, increasing gate length and drain-side underlap for leakage reduction is analyzed.
Keywords :
MOSFET; elemental semiconductors; germanium; leakage currents; tunnelling; BTBT leakage-induced bipolar effect; Ge; amplified BTBT leakage mitigation; band-to-band tunneling; bulk FinFET; channel doping; circuit designs; circuit levels; comparative leakage analysis; drain-side underlap; gate length; germanium-on-bulk substrate FinFET; germanium-on-insulator; high threshold voltage technology; leakage current reduction analysis; Doping; Educational institutions; FinFETs; Germanium; Leakage currents; Logic gates; Band-to-band tunneling (BTBT) leakage; FinFET; germanium; germanium-on-insulator (GeOI);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2278032
Filename :
6588890
Link To Document :
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