• DocumentCode
    1094837
  • Title

    Temperature dependence of peak drift velocity and threshold field in n-In0.53Ga0.47As

  • Author

    Bhattacharyya, Arundhati ; Ghosal, A. ; Chattopadhyay, D.

  • Author_Institution
    Institute of Radio Physics and Electronics, Calcutta, India
  • Volume
    31
  • Issue
    12
  • fYear
    1984
  • fDate
    12/1/1984 12:00:00 AM
  • Firstpage
    1918
  • Lastpage
    1919
  • Abstract
    The peak drift velocity (vp) and the threshold field (Et) for negative differential mobility in In0.53Ga0.47As are calculated in the temperature range of 125-400 K using the Monte Carlo technique. With an increase of temperature, Etincreases but vpdecreases for a pure as well as for an impure material. Etis smaller and vpis larger than the corresponding quantities in GaAs.
  • Keywords
    Acoustic scattering; Electron mobility; Gallium arsenide; Gold; Lattices; Monte Carlo methods; Optical materials; Optical scattering; Temperature dependence; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21816
  • Filename
    1484101
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1094837