Spectral tuning and linewidth narrowing of shallow-junction surface emitting GaAs LED́s through γ-ray irradiation

Alterations of device characteristics as a result of γ-ray irradiation of shallow-junction surface emitting devices are different from those of deep-junction devices with respect to LED emission intensity reduction, I-V curve, line shape, and spectral shift. In particular, much larger spectral shifts in the opposite direction-toward longer wavelengths-are reported here than those found in the literature for deep-junction devices. A qualitative model based upon photochemical doping and changes in surface band bending is proposed to explain these phenomena. Changes in surface emitting shallow-junction optical radiation source device characteristics brought about by γ-ray irradiation are desirable ones for utilization in most optical fiber communication systems. These changes include linewidth narrowing, decreased time response, and decreased material dispersion because of the emission wavelength change.