DocumentCode :
1094914
Title :
Structure Effects on Resistive Switching of 
Devices for RRAM Applications
Author :
Yu, Lee-eun ; Kim, Sungho ; Ryu, Min-Ki ; Choi, Sung-Yool ; Choi, Yang-Kyu
Author_Institution :
Korea Adv. Inst. of Sci. & Technol., Daejeon
Volume :
29
Issue :
4
fYear :
2008
fDate :
4/1/2008 12:00:00 AM
Firstpage :
331
Lastpage :
333
Abstract :
Resistive switching characteristics are investigated for Al/TiOx/Al devices, particularly for the structural effects in crossbar and via-hole-type devices. The via-hole structure shows more reliable switching characteristics than the crossbar structure, owing to the elimination of possible edge effects. The asymmetric switching behavior is analyzed with top Al/TiOx, and bottom Al/TiOx interfaces. A trap-controlled space-charge- limited-current model is proposed as a possible switching mechanism, and it is verified that switching mainly occurs on the top electrode/TiOx, interface side.
Keywords :
aluminium; random-access storage; space charge; switching circuits; titanium compounds; Al-TiOx-Al; Al/TiOx/Al devices; RRAM; asymmetric switching behavior; bottom Al/TiOx interfaces; crossbar structure; resistance random access memory; resistive switching; space-charge-limited-current model; structure effects; top Al/TiOx interfaces; via-hole structure; via-hole-type devices; Crossbar structure; metal–insulator–metal (MIM); metal–insulator–metal (MIM); resistance random access memory (RRAM); resistive switching; space-charge-limited conduction; via-hole structure;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.918253
Filename :
4468747
Link To Document :
