Title :
IIA-3 an (AlGa)As/GaAs/(AlGa)As selectively doped double-heterojunction FET with extremely high channel conductivity
Author :
Inoue, Ken ; Sakaki, H.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Charge carrier density; Conductivity; Electron mobility; FETs; Gallium arsenide; HEMTs; Heterojunctions; MODFET circuits; MODFET integrated circuits; Ring oscillators;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21827
