DocumentCode
1095004
Title
The characterization and functional reliability of 45 Mbit/s optical transmitters containing MBE-grown lasers
Author
Tsang, W.T. ; Dixon, M. ; Dean, B.A.
Author_Institution
Bell Labs., Murray Hill, NJ, USA
Volume
19
Issue
1
fYear
1983
fDate
1/1/1983 12:00:00 AM
Firstpage
59
Lastpage
62
Abstract
We have characterized the performance and studied the functional reliability of 45 Mbit/s lightwave transmitters containing proton-bombarded stripe lasers grown in a research environment by molecular beam epitaxy (MBE). We observe that these transmitters have superior performance compared to transmitters containing lasers of similar geometry grown in production facilities by liquid phase epitaxy (LPE), and subsequently processed using the same technology. The reliability data of over 10 000 h indicate that the functional lifetime of the MBE lasers will be limited ultimately by extinction ratio degradation in our circuit strategy. The origin of the degradation is the increase of the spontaneous light at the bias current.
Keywords
Gallium materials/lasers; Optical fiber transmitters, lasers; Proton radiation effects; Semiconductor device reliability; Semiconductor growth; Aging; Circuits; Degradation; Diode lasers; Laser feedback; Laser stability; Molecular beam epitaxial growth; Optical transmitters; P-i-n diodes; Packaging;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1983.1071731
Filename
1071731
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