• DocumentCode
    1095004
  • Title

    The characterization and functional reliability of 45 Mbit/s optical transmitters containing MBE-grown lasers

  • Author

    Tsang, W.T. ; Dixon, M. ; Dean, B.A.

  • Author_Institution
    Bell Labs., Murray Hill, NJ, USA
  • Volume
    19
  • Issue
    1
  • fYear
    1983
  • fDate
    1/1/1983 12:00:00 AM
  • Firstpage
    59
  • Lastpage
    62
  • Abstract
    We have characterized the performance and studied the functional reliability of 45 Mbit/s lightwave transmitters containing proton-bombarded stripe lasers grown in a research environment by molecular beam epitaxy (MBE). We observe that these transmitters have superior performance compared to transmitters containing lasers of similar geometry grown in production facilities by liquid phase epitaxy (LPE), and subsequently processed using the same technology. The reliability data of over 10 000 h indicate that the functional lifetime of the MBE lasers will be limited ultimately by extinction ratio degradation in our circuit strategy. The origin of the degradation is the increase of the spontaneous light at the bias current.
  • Keywords
    Gallium materials/lasers; Optical fiber transmitters, lasers; Proton radiation effects; Semiconductor device reliability; Semiconductor growth; Aging; Circuits; Degradation; Diode lasers; Laser feedback; Laser stability; Molecular beam epitaxial growth; Optical transmitters; P-i-n diodes; Packaging;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1983.1071731
  • Filename
    1071731