Title :
IIA-6 analysis of (Al, Ga)As/GaAs MODFET current characteristics at 77 K: Elimination of current collapse, observation of transconductance dip
Author :
Fischer, Ray ; Masselink, W. Ted ; Henderson, Tim ; Klem, J. ; Arnold, Dorian ; Morkoc, H.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Annealing; Current measurement; Electron devices; FETs; Gallium arsenide; HEMTs; Laboratories; MODFETs; Threshold voltage; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21830
