Title :
IIB-1 Subhalf-micrometer MOSFET´s fabricated using focused ion-beam lithography
Author :
Rensch, D.B. ; Chen, J.Y.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Annealing; CMOS technology; Doping; FETs; Fabrication; Implants; Laboratories; Lithography; Resists; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21832
