Title :
Reversible positive charge annealing in MOS transistor during variety of electrical and thermal stresses
Author :
Emelianov, V.V. ; Zebrev, G.I. ; Ulimov, V.N. ; Useinov, R.G. ; Belyakov, V.V. ; Pershenkov, V.S.
Author_Institution :
Res. Inst. of Sci. Instrum., Moscow, Russia
fDate :
6/1/1996 12:00:00 AM
Abstract :
The postirradiation response of n-channel MOSTs during thermal and electrical stresses is investigated. It is found that reversible positive charge annealing plays a key role in the postirradiation response of the MOST. A mathematical model of reversible charge relaxation process is suggested
Keywords :
MOSFET; annealing; electric charge; radiation effects; semiconductor device models; thermal stresses; MOS transistor; electrical stresses; mathematical model; n-channel MOSTs; nMOSFETs; postirradiation response; reversible charge relaxation process; reversible positive charge annealing; thermal stresses; Annealing; Electron traps; Instruments; MOSFETs; Mathematical model; Physics; Thermal stresses; Thermoelectric devices; Thermoelectricity; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
