DocumentCode

1095065

Title

IIB-2 a novel high-performance MOSFET fabricated using focused ion-beam doping

Author

Shukuri, S. ; Tamura, Masato ; Masuda, Hiroji ; Ishitani, T.

Volume

31

Issue

12

fYear

1984

fDate

12/1/1984 12:00:00 AM

Firstpage

1964

Lastpage

1965

Keywords

Aluminum; Copper; Doping; Impurities; Laboratories; MOSFET circuits; Silicon; Threshold voltage; Titanium; Tungsten;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1984.21834

Filename

1484119