DocumentCode
1095099
Title
Post-irradiation effects in a rad-hard technology
Author
Chabrerie, Christian ; Musseau, Olivier ; Flament, Olivier ; Leray, Jean-Luc ; Boudenot, Jean-Claude ; Shipman, Benoit ; Callewaert, Heme
Author_Institution
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
Volume
43
Issue
3
fYear
1996
fDate
6/1/1996 12:00:00 AM
Firstpage
826
Lastpage
830
Abstract
We studied radiation and post-irradiation effects in a CMOS rad-hard technology. The physical properties of charge detrapping in the gate oxide, investigated by isothermal and isochronal annealings, are dependent on the experimental procedure (bias, time storage, temperature, dose level)
Keywords
CMOS integrated circuits; annealing; radiation effects; radiation hardening (electronics); CMOS radiation-hard technology; charge detrapping; experimental procedure dependence; gate oxide; isochronal annealing; isothermal annealing; physical properties; post-irradiation effects; radiation effects; Annealing; CMOS technology; Degradation; Isothermal processes; MOSFETs; Radiation hardening; Silicon on insulator technology; Temperature; Testing; Threshold voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.510720
Filename
510720
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