Total dose response of a U.H.F. complementary-bipolar process (C-bip) using dielectric isolation (DI/SOI)

Author

Mélotte, Michel

Author_Institution

Soc. de Microelectron., Charleroi, Belgium

Volume

43

Issue

3

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

831

Lastpage

836

Abstract

Fast analog signal processing in ionizing radiation environments is today a growing activity for our ASIC design company. To answer this need, we have tested the total-dose response, up to 30 kGy(Si) (3 Mrad(Si)), of the NPN and PNP transistors used in the DI-Cbip UHF process from Harris Semiconductor. Results show a common-emitter current gain (β) degradation of approximately 50% at usual current density. Degradation versus total dose exhibits saturation above over 20 kGy(Si) at 36 mGy(Si)/s (3.6 rad(Si)/s)

Keywords

UHF integrated circuits; analogue processing circuits; application specific integrated circuits; bipolar analogue integrated circuits; integrated circuit technology; isolation technology; radiation effects; radiation hardening (electronics); silicon-on-insulator; 3 Mrad; 30 kGy; ASIC design; DI-Cbip UHF process; Harris Semiconductor; NPN transistors; PNP transistors; SOI; Si; UHF complementary-bipolar process; common-emitter current gain; current gain degradation; dielectric isolation; fast analog signal processing; ionizing radiation environments; total-dose response; Application specific integrated circuits; Bipolar transistors; Degradation; Dielectric substrates; Isolation technology; Noise figure; Radio frequency; Resistors; Thin film transistors; Wafer bonding;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.510721

Filename

510721