Evaluation of GaAs low noise and power MMIC technologies to neutron, ionizing dose and dose rate effects

Author

Derewonko, H. ; Bosella, A. ; Pataut, G. ; Perié, D. ; Pinsard, J.L. ; Sentubery, C. ; Verbeck, C. ; Bressy, P. ; Augier, P.

Author_Institution

Thomson-CSF-TCS, Orsay, France

Volume

43

Issue

3

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

837

Lastpage

844

Abstract

An evaluation programme of Thomson CSF-TCS GaAs low noise and power MMIC technologies to 1 MeV equivalent neutron fluence levels, up to 1×10¹⁵ n/cm², ionizing 1.17-1.33 MeV Co ⁶⁰ dose levels in excess of 200 Mrad(GaAs) and dose rate levels reaching 1.89×10¹¹ rad(GaAs)/s is presented in terms of proper components and parameter choices, DC/RF electrical measurements and test methods under irradiation. Experimental results are explained together with drift analyses of electrical parameters that have determined threshold limits of component degradations. Modelling the effects of radiation on GaAs components relies on degradation analysis of active layer which appears to be the most sensitive factor. MMICs degradation under neutron fluence was simulated from irradiated FET data. Finally, based on sensitivity of technological parameters, rad-hard design including material, technology and MMIC design enhancement is discussed

Keywords

III-V semiconductors; MESFET integrated circuits; field effect MMIC; gallium arsenide; integrated circuit modelling; integrated circuit noise; neutron effects; power integrated circuits; radiation effects; radiation hardening (electronics); 200 Mrad; Co⁶⁰ dose levels; GaAs; GaAs low noise MMIC technologies; GaAs power MMIC technologie; MMIC design enhancement; Thomson CSF-TCS; active layer; component degradations; degradation analysis; dose rate effects; drift analyses; electrical measurements; electrical parameters; ionizing dose effects; irradiated FET data; modelling; neutron effects; radiation-hard design; test methods; threshold limits; Degradation; Electric variables measurement; Gallium arsenide; MMICs; Neutrons; Noise level; Noise measurement; Power measurement; Radio frequency; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.510722

Filename

510722