Radiation induced thermally stimulated luminescence and conductivity in SIMOX oxides

Author

Martini, M. ; Meinardi, F. ; Rosetta, E. ; Spinolo, G. ; Vedda, A. ; Leray, J.L. ; Paillet, P. ; Autran, J.L. ; Devine, R.A.B.

Author_Institution

Dipartimento di Fisica, Milan Univ., Italy

Volume

43

Issue

3

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

845

Lastpage

850

Abstract

Thermally Stimulated Luminescence (TSL) and Conductivity (TSC) induced by X-ray irradiation in SIMOX buried oxides have been studied from room temperature up to 400°C. The characteristics of an X-ray induced TSL glow peak detected around 62°C are presented: specifically, results on the emission wavelength and trap depth are shown. The X-ray induced TSC, observed at approximately 70°C, is due to the same trapped species responsible of the TSL emission. The stability after irradiation and dose dependence of both TSL and TSC signals have also been investigated. The results have been compared with similar studies on high temperature annealed thermal SiO₂ films and bulk materials

Keywords

SIMOX; X-ray effects; buried layers; dielectric thin films; electrical conductivity; stability; thermoluminescence; 20 to 400 C; SIMOX oxides; Si-SiO₂; TSC signals; TSL signals; X-ray irradiation; buried oxides; dose dependence; emission wavelength; stability; thermally stimulated conductivity; thermally stimulated luminescence; trap depth; Annealing; Luminescence; Microelectronics; Performance evaluation; Silicon; Spectroscopy; Temperature measurement; Temperature sensors; Thermal conductivity; Wavelength measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.510723

Filename

510723