Title :
IIIA-2 gate capacitance and saturated drift velocity in selectively doped heterojunction transistors
Author :
Feuer, Mark D. ; Hendel, R.H. ; Tu, C.W.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Capacitance measurement; Circuits; Delay; Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MODFETs; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21840
