DocumentCode

1095138

Title

IIIA-2 gate capacitance and saturated drift velocity in selectively doped heterojunction transistors

Author

Feuer, Mark D. ; Hendel, R.H. ; Tu, C.W.

Volume

31

Issue

12

fYear

1984

fDate

12/1/1984 12:00:00 AM

Firstpage

1967

Lastpage

1968

Keywords

Capacitance measurement; Circuits; Delay; Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MODFETs; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1984.21840

Filename

1484125