DocumentCode
1095141
Title
A study involving the design and the fabrication process on the SRAM behaviour during a dose-rate event
Author
Marec, Ronan ; Mary, Patrick ; Gaillard, Rémi ; Palau, Jean-Marie ; Bruguier, Guy ; Gasiot, Jean
Author_Institution
Nucletudes SA, Courtaboeuf-Orsay, France
Volume
43
Issue
3
fYear
1996
fDate
6/1/1996 12:00:00 AM
Firstpage
851
Lastpage
857
Abstract
The experimental results analysis of TS4T1601 SRAMs in standby mode and electrical simulations show that the SRAM design and some slight mask misalignments during the fabrication process are dominant factors concerning the dose-rate upset patterns and thresholds
Keywords
CMOS memory circuits; SRAM chips; equivalent circuits; integrated circuit modelling; radiation effects; simulation; SRAM behaviour; SRAM design; TS4T1601; dose-rate event; dose-rate thresholds; dose-rate upset patterns; electrical simulations; fabrication process; mask misalignments; standby mode; static RAM; Analytical models; Circuits; Fabrication; Pattern analysis; Random access memory; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.510724
Filename
510724
Link To Document