DocumentCode :
1095148
Title :
IIIA-1 Ultralow-noise and high-frequency operation of TEGFET´s made by molecular-beam epitaxy
Author :
Laviron, M. ; Delagebeaudeuf, D. ; Rochette, J.F. ; Tung, P.N. ; Delescluse, P. ; Chevrier, J. ; Linh, N.T.
Volume :
31
Issue :
12
fYear :
1984
fDate :
12/1/1984 12:00:00 AM
Firstpage :
1967
Lastpage :
1967
Keywords :
Capacitance measurement; Electron mobility; Gallium arsenide; HEMTs; Heterojunctions; MESFETs; MODFETs; Molecular beam epitaxial growth; Transconductance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21841
Filename :
1484126
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1095148
