DocumentCode
1095148
Title
IIIA-1 Ultralow-noise and high-frequency operation of TEGFET´s made by molecular-beam epitaxy
Author
Laviron, M. ; Delagebeaudeuf, D. ; Rochette, J.F. ; Tung, P.N. ; Delescluse, P. ; Chevrier, J. ; Linh, N.T.
Volume
31
Issue
12
fYear
1984
fDate
12/1/1984 12:00:00 AM
Firstpage
1967
Lastpage
1967
Keywords
Capacitance measurement; Electron mobility; Gallium arsenide; HEMTs; Heterojunctions; MESFETs; MODFETs; Molecular beam epitaxial growth; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21841
Filename
1484126
Link To Document