DocumentCode

1095172

Title

IIIA-4 P-channel Ga0.5Al0.5As/GaAs MODFET´s

Author

Wang, W.I. ; Tiwari, Sunita

Volume

31

Issue

12

fYear

1984

fDate

12/1/1984 12:00:00 AM

Firstpage

1968

Lastpage

1969

Keywords

Circuit testing; Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Hall effect; Heterojunctions; Logic devices; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1984.21844

Filename

1484129