Title :
Analysis of local and global transient effects in a CMOS SRAM
Author :
Gardic, F. ; Musseau, O. ; Flament, O. ; Brisset, C. ; Ferlet-Cavrois, V. ; Martinez, M. ; Corbiere, T.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
fDate :
6/1/1996 12:00:00 AM
Abstract :
We have studied the sensitivity of a 256 Kbit CMOS/epi SRAM to transient phenomena (protons and ions SEU, dose rate). Local and global failure mechanisms are observed and discussed. For single particles, or at low dose rate, cell upsets are uncorrelated. When the dose rate is increased, correlated failures are due to both cell photocurrent summation (rail span collapse) and supply voltage drop in peripheral circuits. The transition between uncorrelated to correlated failures is interpreted, on the basis of device structure and pattern influence
Keywords :
CMOS memory circuits; SRAM chips; failure analysis; integrated circuit reliability; integrated circuit testing; ion beam effects; proton effects; sensitivity; transient analysis; 256 Kbit; CMOS/epi SRAM; cell photocurrent summation; cell upsets; correlated failures; device structure; dose rate; failure mechanisms; global transient effects; ion SEU; local transient effects; pattern influence; proton SEU; rail span collapse; sensitivity; supply voltage drop; Failure analysis; Optical pulse generation; Photoconductivity; Protons; Rails; Random access memory; Single event upset; Testing; Transient analysis; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
