Analysis of local and global transient effects in a CMOS SRAM

Author

Gardic, F. ; Musseau, O. ; Flament, O. ; Brisset, C. ; Ferlet-Cavrois, V. ; Martinez, M. ; Corbiere, T.

Author_Institution

CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France

Volume

43

Issue

3

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

899

Lastpage

906

Abstract

We have studied the sensitivity of a 256 Kbit CMOS/epi SRAM to transient phenomena (protons and ions SEU, dose rate). Local and global failure mechanisms are observed and discussed. For single particles, or at low dose rate, cell upsets are uncorrelated. When the dose rate is increased, correlated failures are due to both cell photocurrent summation (rail span collapse) and supply voltage drop in peripheral circuits. The transition between uncorrelated to correlated failures is interpreted, on the basis of device structure and pattern influence

Keywords

CMOS memory circuits; SRAM chips; failure analysis; integrated circuit reliability; integrated circuit testing; ion beam effects; proton effects; sensitivity; transient analysis; 256 Kbit; CMOS/epi SRAM; cell photocurrent summation; cell upsets; correlated failures; device structure; dose rate; failure mechanisms; global transient effects; ion SEU; local transient effects; pattern influence; proton SEU; rail span collapse; sensitivity; supply voltage drop; Failure analysis; Optical pulse generation; Photoconductivity; Protons; Rails; Random access memory; Single event upset; Testing; Transient analysis; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.510731

Filename

510731