Title :
IIIA-7 GaAs permeable base transistors fabricated using organometallic chemical vapor deposition
Author :
Nichols, K.B. ; Gale, R.P. ; Hollis, Mark A. ; Bozler, C.O.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Channel hot electron injection; Chemical vapor deposition; Degradation; Extrapolation; Frequency; Gallium arsenide; Gratings; MOSFET circuits; Silicon; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21846
