DocumentCode
1095211
Title
IIIA-7 GaAs permeable base transistors fabricated using organometallic chemical vapor deposition
Author
Nichols, K.B. ; Gale, R.P. ; Hollis, Mark A. ; Bozler, C.O.
Volume
31
Issue
12
fYear
1984
fDate
12/1/1984 12:00:00 AM
Firstpage
1969
Lastpage
1970
Keywords
Channel hot electron injection; Chemical vapor deposition; Degradation; Extrapolation; Frequency; Gallium arsenide; Gratings; MOSFET circuits; Silicon; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21846
Filename
1484131
Link To Document